Monday, March 1, 2010

Micron and Nanya Tech develop DDR 2GB 42Nm

Micron and Nanya Technology are working together to develop DDR3 memory device 2 Gigabyte (GB) by using DRAM process technology based on 42 nanometer copper.



DDR3 is the main memory technology is used in applications of high-performance computing, including computer servers, notebooks, and desktops. Geometry moves towards smaller process is very important to maintain the efficiency of production costs and provide benefits to customers, including power consumption is lower, the better performance, higher density, and printed a smaller memory.



The new 42nm process is now a 1.35-volt power into the power that is widely used standards compared with the 1.5-volt memory the previous generation. Reducing power consumption is very important today for the server environment, because the cost of power and cooling infrastructure comparable to the cost of their own server equipment. With the increasing demand on the server memory, the memory power consumption is estimated to achieve up to 21-watts per module. 1.35-volt power can provide up to 30 percent savings in these applications, thus reducing both the power and cooling requirements.



Quality faster memory is important to obtain maximum system performance. With shrinking process technology, device DDR3 new 2Gb 42nm memory perform better able to achieve up to 1866 megabits per second. In addition, a small memory with 2GB density of the 42nm devices can produce DDR3 modules up to 16GB capacity.
 
"With the movement toward 42nm, and the process is already working 3Xnm in both R & D facility we in Boise, Micron expertise in copper and metalitation special cell capacitor technology makes us remain a leader in design and innovation DRAM process," said Feurle Robert, vice DRAM president of Marketing.
"Adding devices to the new 2Gb 42nm is on our DRAM product line strengthens our portfolio of memory solutions that are very diverse for a complete application for users," he added.




"Nanya plans to serve the server and PC markets, as well as consumer markets, with the device with the latest technology, DDR3 2GB, the device is the most competitive DRAM has ever produced, for our customers," according to Dr. Pei Lin Pai, Vice President of global sales and marketing and spokesman for Nanya.
 

42nm DRAM process technology to new uses of copper metalitation technology more efficient and reliable, making Micron and Nanya remains at the forefront of process technology improvements. Micron has long known the benefits of copper in helping to increase DRAM, and has continued to utilize and improve the technology for nearly a decade.



 
When compared with other metalitation techniques, such as aluminum, copper is known as a better approach can be expanded, reliable and more cost effective for enhancing and improving the geometry of the product performance. When Micron and Nanya continue to improve its technology, moving towards the next 3Xnm process technology, both companies rely on the foundation of their strong copper to deliver quality products and reliable high.

Shipping samples is scheduled to begin in the second quarter kelendar 2010, with production operations scheduled to start the second half of this year.
 

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